Descripción
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier’s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.
Guard ring for Stress Protection
Low Forward Voltage
125 C Operating Junction Temperature
Package Designed for Optimal Automated Assembly
ESD Ratings: Machine Model = C, Human Body Model = 3B
All Packages are Pb-Free
PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
| Atributo | Valor |
|---|---|
| Tipo de Montaje | Montaje superficial |
| Tipo de Encapsulado | SOD-123FL |
| Corriente Continua Máxima Directa | 1A |
| Tensión Repetitiva Inversa de Pico | 40V |
| Configuración de diodo | Simple |
| Tipo de Rectificador | Rectificador Schottky |
| Tipo de Diodo | Schottky |
| Conteo de Pines | 2 |
| Número de Elementos por Chip | 1 |
| Tecnología de diodo | Barrera Schottky |
| Transitorios de corriente directa no repetitiva de pico | 30A |
Valoraciones
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