Descripción
This P-Channel MOSFET has been produced using a proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVdss capability to offer superior performance benefit in the applications.
Max rDS(on) = 55mΩ at VGS = 10V, ID = -4.2A
Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A
Applications
This product is general usage and suitable for many different applications.
| Atributo | Valor |
|---|---|
| Tipo de Encapsulado | TSOT-23 |
| Tipo de Montaje | Montaje superficial |
| Disipación de Potencia Máxima | 1.6 W |
| Conteo de Pines | 6 |
| Número de Elementos por Chip | 1 |
| Temperatura Máxima de Funcionamiento | +150 °C |
| Dimensiones | 3 x 1.7 x 1mm |
Valoraciones
No hay valoraciones aún.