Descripción
Controladores MOSFET e IGBT, ON Semiconductor
Controladores de potencia para IGBT y MOSFET en lado bajo, lado alto y circuitos de medio puente.
High Voltage Range: Up to 600 V
dV/dt Immunity ± 50 V/nsec
Gate Drive Supply Range from 10 V to 20 V
High and Low Drive Outputs
Output Source / Sink Current Capability 250 mA / 500 mA
3.3 V and 5 V Input Logic Compatible
Up to Vcc Swing on Input Pins
Matched Propagation Delays Between Both Channels
Outputs in Phase with the Inputs
Independent Logic Inputs to Accommodate All Topologies (Version A)
Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B )
Under Vcc LockOut (UVLO) for Both Channels
Pin-to-Pin Compatible with Industry Standards
Applications
Half-Bridge Power Converters
Any Complementary Drive Converters (Asymmetrical Half-Bridge, Active Clamp) (A version only).
Full-Bridge Converters
Controladores MOSFET e IGBT, ON Semiconductor
| Atributo | Valor |
|---|---|
| Corriente de Salida | 500 mA |
| Tensión de Alimentación | 20V |
| Conteo de Pines | 8 |
| Tiempo de Bajada | 75ns |
| Tipo de Encapsulado | SOIC |
| Número de Salidas | 2 |
| Tipo de Driver | MOSFET |
| Tiempo de Subida | 160ns |
| Dependencia Partes Alta y Baja | Independiente |
| Número de Drivers | 2 |
| Retardo de tiempo | 170ns |
| Tipo de Montaje | Montaje superficial |
Valoraciones
No hay valoraciones aún.