Descripción
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).
-1.5 A, -20 V
RDS(ON) = 0.145Ω @ VGS = -4.5 V
RDS(ON) = 0.210Ω @ VGS = -2.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
Compact industry standard SC70-6 surface mount package
Applications
This product is general usage and suitable for many different applications.
| Atributo | Valor |
|---|---|
| Tipo de Encapsulado | SC-70 |
| Tipo de Montaje | Montaje superficial |
| Disipación de Potencia Máxima | 750 mW |
| Conteo de Pines | 6 |
| Número de Elementos por Chip | 1 |
| Dimensiones | 2.2 x 1.35 x 1mm |
| Temperatura Máxima de Funcionamiento | +150 °C |
Valoraciones
No hay valoraciones aún.